规格：晶体管封装类型 SOIC,
VISHAY
晶体管, MOSFET, P沟道, -9A, -30V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INFINEON
双路场效应管, MOSFET, 双P沟道, -3.6 A, -30 V, 0.1 ohm, -10 V, -1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0029 ohm, 10 V, 2.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 20 V, 4.4 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 20 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.2 A, -30 V, 0.0133 ohm, -20 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7 A, 60 V, 0.02 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -4.5 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 1.9 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -29 A, -30 V, 3.9 mohm, -10 V, -2.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, 4.2 A, -20 V, 0.049 ohm, -4.5 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 0.0136 ohm, -10 V, -1.9 V
(EN)INFINEON
场效应管, MOSFET
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -3.4 A, -55 V, 0.095 ohm, -10 V, -1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 20V, SOIC
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N/P通道, MOSFET, 30V, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 0.022 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 150 V, 0.09 ohm, 10 V, 5.5 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 130 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双极晶体管阵列, 达林顿, NPN, 50 V, 500 mA, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V
(EN)
