NEXPERIA

单晶体管 双极, 达林顿, NPN, 60 V, 200 MHz, 1.25 W, 1 A, 2000 hFE

VISHAY

晶体管, MOSFET, P沟道, -4.7 A, -20 V, 39 mohm, -4.5 V, -1 V

NEXPERIA

单晶体管 双极, PNP, -80 V, 200 MHz, 1.25 W, -1 A, 2000 hFE

ON SEMICONDUCTOR

晶体管, MOSFET, P沟道, -3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV

VISHAY

场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷

VISHAY

单管二极管 齐纳, 9.1 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C

VISHAY

场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷

VISHAY

单管二极管 齐纳, 6.2 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C

VISHAY

场效应管, MOSFET, 双路 N 通道, 30V, 0.0093Ω

VISHAY

场效应管, MOSFET, P沟道, -30V, -4A

VISHAY

场效应管, MOSFET, P沟道, -12V, 4.1A TO-236, 整卷

INFINEON

场效应管, MOSFET

ON SEMICONDUCTOR

双路场效应管, MOSFET, 双P沟道, -3.05 A, -30 V, 0.063 ohm, -10 V, -1.7 V

TAIWAN SEMICONDUCTOR

晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV

ROHM

晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.08 ohm, -10 V, -2.5 V

ROHM

晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.05 ohm, -4.5 V, -2 V

INFINEON

场效应管, MOSFET

ROHM

晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1.5 V

ROHM

晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.044 ohm, 10 V, 2.5 V

ROHM

晶体管, MOSFET, N沟道, 4.5 A, 30 V, 0.021 ohm, 10 V, 2.5 V

ROHM

晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.019 ohm, 10 V, 2.5 V

ROHM

晶体管, MOSFET, P沟道, -3 A, -30 V, 0.07 ohm, -10 V, -2.5 V

TAIWAN SEMICONDUCTOR

单管二极管 齐纳, 56 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 175 °C

ROHM

晶体管, MOSFET, N沟道, 2 A, 30 V, 194 mohm, 4.5 V, 1.5 V

VISHAY

单管二极管 齐纳, 5.6 V, 1.25 W, DO-214AC, 5 %, 2 引脚, 150 °C