规格：电流, Id 连续 10A,
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 10 A, 30 V, 0.0134 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 10A, 8-SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.009 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 80 V, 13.4 mohm, 10 V, 4.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 80 V, 13.4 mohm, 10 V, 4.9 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 12 V, 15 mohm, 4.5 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 20 V, 13.4 mohm, 10 V, 2.55 V
INFINEON
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 150 V, 0.0255 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
(EN)
IXYS RF
晶体管, 射频FET, 500 V, 10 A, 470 W, 175 MHz, DE-275
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 10A, SOIC
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0094 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 整卷
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 0.015 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 60 V, 0.015 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 8 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
