规格：在电阻RDS（上） 8ohm,
INFINEON
晶体管, MOSFET, P沟道, -140 mA, -250 V, 8 ohm, -10 V, -1.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-220F-3
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
MICROCHIP
场效应管, MOSFET, N沟道, 650V, 0.3A, TO-252AA-3
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.4 A, 600 V, 8 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-3PF-3
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-3P-3
(EN)ROHM
晶体管, MOSFET, N沟道, 100 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -170 mA, -60 V, 8 ohm, -10 V, -1.5 V
(EN)
CLARE
晶体管, MOSFET, N沟道, 130 mA, 350 V, 8 ohm, -350 mV
(EN)
CLARE
场效应管, MOSFET, N沟道, 耗尽型, 350V, 8Ω, 5MA, SOT-223-4, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 150 mA, -20 V, 8 ohm, -4.5 V, -1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 125 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -20 V, 8 ohm, -4 V, 1.1 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 500 mA, 600 V, 8 ohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 10 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 10 mA, 30 V, 8 ohm, 4 V, 1.5 V
(EN)
