The SI3590DV-T1-GE3 is a 30V Dual N and P-channel TrenchFET? Power MOSFET. Ultra low RDS(on) for high Efficiency and optimized for high side and low side operation. The surface-mounted LITTLE FOOT? power MOSFET uses integrated circuit and small-signal packages which have been modified to provide the heat transfer capabilities required by power devices.
Halogen-free according to IEC 61249-2-21 definition
(EN)
