The CRS08 is a Schottky Barrier Rectifier, improved trade-off. The Schottky barrier rectifier have a junction formed between a semiconductor and a metal such as molybdenum, instead of a PN junction. Toshiba offers SBDs fabricated using a new process that provides an improved VF-IRRM trade-off. These new SBDs, together with conventional SBDs, will meet diverse design requirements. Owing to low peak forward voltage (VFM) and low repetitive peak reverse current (IRRM) characteristics, these SBDs provide low power loss and thus help reduce the size and improve the power efficiency.
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