The UCC27519DBVT is a single-channel high-speed low-side Gate Driver Device can effectively drive MOSFET and IGBT power switches. Using a design that inherently minimizes shoot-through current, it can source and sink high, peak-current pulses into capacitive loads offering rail-to-rail drive capability and extremely small propagation delay typically 17ns. It provides 4A source, 4A sink (symmetrical drive) peak-drive current capability at VDD=12V. It is designed to operate over a wide VDD range of 4.5 to 18V and a wide temperature range of -40 to 140°C. Internal under-voltage lockout (UVLO) circuitry on the VDD pin holds output low outside VDD operating range. The capability to operate at low voltage levels such as below 5V, along with best-in-class switching characteristics, is especially suited for driving emerging wide band-gap power switching devices such as GaN power semiconductor devices.
Gate-driver device offering superior replacement of NPN and PNP discrete solutions
Outputs held low during VDD-UVLO (ensures glitch-free operation at power up and power-down)
CMOS input logic threshold (function of supply voltage with hysteresis)
Hysteretic-logic thresholds for high noise immunity
EN pin for enable function (allowed to be no connect)
Output held low when input pins are floating
Input pin absolute maximum voltage levels not restricted by VDD pin bias supply voltage
(EN)
