The LM5112MY is a MOSFET Gate Driver provides high peak gate drive current with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-ON voltage. It provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
Compound CMOS and bipolar outputs reduce output current variation
Fast rise and fall time (14/12ns rise/fall with 2nF load)
Inverting and non-inverting inputs provide either configuration with a single device
Supply rail under-voltage lockout protection
Dedicated input ground (IN_REF) for split supply or single supply operation
Output swings from VCC to VEE which can be negative relative to input ground
(EN)
