The LM5110-3M/NOPB is a dual Gate Driver with negative output voltage capability. The gate driver replaces industry standard gate driver with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide negative drive capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. The ability to hold MOSFET gates off with a negative VGS voltage reduces losses when driving low threshold voltage MOSFETs often used as synchronous rectifiers.
Independently drives two N-channel MOSFETs
Compound CMOS and bipolar outputs reduce output current variation
Two channels can be connected in parallel to double the drive current
Independent inputs (TTL compatible)
Fast rise and fall time (14/12ns rise/fall with 2nF load)
Dedicated input ground pin (IN_REF) for split supply or single supply operation
Outputs swing from VCC to VEE which can be negative relative to input ground
Available in dual non-inverting, dual inverting and combination configurations
Shutdown input provides low power mode
Supply rail under-voltage lockout protection
Pin-out compatible with industry standard gate drivers
(EN)
