The STP12NM50 is a 500V N-channel Power MOSFET developed using revolutionary MDmesh? technology, which associates the multiple drain process with the PowerMESH? horizontal layout. This MOSFET offers extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing proprietary strip technique, MOSFET boasts an overall dynamic performance which is superior. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
High dv/dt and avalanche capabilities
Low input capacitance and gate charge
100% Avalanche tested
Low gate input resistance
Tight process control and high manufacturing yields