The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized.
Drain to source voltage (Vds) is 200V
Gate to source voltage of ±20V
Continuous drain current (Id) is 9A
Power dissipation (Pd) is 75W
Operating junction temperature range from -65°C to 150°C