The S29GL512P11TFI010 is a Mirrorbit? Flash Memory Device fabricated on 90nm process technology. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 90ns. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today's embedded applications that require higher density, better performance and lower power consumption.
Single 3V read/program/erase
Enhanced Versatile I/O? control
Suspend and resume commands for program and erase operations
Write operation status bits indicate program and erase operation completion
Unlock bypass program command to reduce programming time
Support for CFI (common flash interface)
Persistent and password methods of advanced sector protection
Hardware reset input (RESET#) resets device
90nm MirrorBit process technology
8-word/16-byte Page read buffer
32-word/64-byte Write buffer reduces overall programming time for multiple-word updates
