The PMD16K80 is an NPN Darlington Power Transistor with monolithic epitaxial base structure with built-in base to emitter shunt resistors. This device is CVD glass passivated to increase reliability and provide reduced high temperature reverse leakage current. This important feature enables this series Darlington device to meet guaranteed operation temperature 200°C. Internal diode protection (D1) of Darlington configuration is built into the structure of limit device power dissipation during negative overshoot. Excellent thermal resistance junction to case provides for more useable power at lower operating temperature.
Hermetically sealed
Low thermal resistance for more useable power and lower operating temperature
(EN)
