The R1LV0408DSA-5SI#B0 is a 4MB Static Random Access Memory (SRAM) organized 512-kword x 8-bit, fabricated by Renesass high performance 0.15μm CMOS and TFT technologies. R1LV0408D Series has realized higher density, higher performance and low power consumption. The R1LV0408D Series offers low power standby power dissipation, therefore it is suitable for battery backup systems. It also features single 3V supply of 2.7 to 3.6V.
- Access time - 55ns maximum
- Power dissipation- 3μW standby typical
- Equal access and cycle times
- Common data input and output - 3-state output
- Directly TTL compatible - all inputs and outputs
- Battery backup operation
计算机和计算机周边, 工业, 通信与网络, 消费电子产品
