The NGTB25N120IHLWG is a 1200V (Insulated Gate Bipolar Transistor) IGBT features a robust and cost effective Field Stop (FS) trench construction. It provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged freewheeling diode with a low forward voltage.
Low saturation voltage using trench with field-stop technology
Low switching loss reduces system power dissipation
Optimized for low case temperature in IH cooker application
Low gate charge
Low conduction loss
±20V Gate to emitter voltage
0.65°C/W IGBT thermal resistance, junction to case