The BSS123 from NXP is a surface mount, N channel enhancement mode field effect transistor in SOT-23 package using TrenchMOS technology. This transistor features very high speed switching and logic level compatibility. BS123 is suitable for high speed line drivers, telephone ringer and relay drivers.
Drain to source voltage (Vds) of 100V
Gate to source voltage of ±20V
Continuous drain current (Id) of 150mA
Power dissipation (Pd) of 250mW
Operating junction temperature range from -55°C to 150°C
(EN)
