The BSH103 from NXP is a surface mount, N channel enhancement mode MOS transistor in SOT-23 package using TrenchMOS technology. This transistor features very low threshold, high speed switching, no secondary breakdown and direct interface to CMOS, TTL. BSH103 is designed and qualified for use in high frequency applications, glue logic interface between logic blocks or periphery, computing, battery powered applications.
Suitable for use with all 5V logic families
Suitable for very low gate drive sources
Drain to source voltage (Vds) of 30V
Gate to source voltage of ±8V
Drain current (Id) of 850mA
Power dissipation (Pd) of 750mW
Operating junction temperature range from -55°C to 150°C
(EN)
