The 2N2369 from Multicomp is a through hole, silicon planar epitaxial NPN high speed switching transistors in TO-18 metal can package. This transistor features fast switching, short turn off and low saturation voltage. Typical application are low power, high speed saturated switching.
- Collector emitter voltage (Vce) of 15V
- Continuous collector current (Ic) of 200mA
- Power dissipation of 360mW
- Operating junction temperature range from -65°C to 200°C
- Collector emitter saturation voltage is less than 250mV at Ic=10mA
- DC current gain is greater than 20 at Ic=100mA
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