The SST25VF040B-80-4I-S2AE is a 4MB SPI Serial Flash Memory with proprietary, high-performance CMOS SuperFlash technology. The SST25VF040B device is enhanced with improved operating frequency and even lower power consumption. The split-gate cell design and thick-oxide tunnelling injector attain better reliability and manufacturability compared with alternate approaches. The SST25VF040B device significantly improves performance and reliability, while lowering power consumption. The device write (Program or Erase) with a single power supply of 2.7 to 3.6V for SST25VF040B. The total energy consumed is a function of the applied voltage, current and time of application. Since for any given voltage range, the SuperFlash technology uses less current to program and has a shorter erase time, the total energy consumed during any erase or program operation is less than alternative flash memory technologies.
Single voltage read and write operation
Serial interface architecture - SPI compatible of mode 0 and mode 3
Superior reliability - 100000 cycles endurance and greater than 100-year data retention
Low power consumption - 10mA (typical) active read current and 5μA (typical) standby current
Flexible erase capability
Fast erase and byte-program
Auto Address Increment (AAI) programming
End-of-write detection
Hold pin (HOLD#) - Suspends a serial sequence to the memory without deselecting the device
Write protection (WP#) - Enables/disables the lock-down function of the status register
Software write protection - Write protection through Block-Protection bits in status register
