The DS1265W-100IND+ is a 3.3V 8Mb non-volatile SRAM in 36 pin EDIP package. This device is organized as 1,048,576 words by 8-bits. Each NV SRAM has a self-contained lithium energy source and control circuitry that constantly monitors VCC for an out of tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and the write protection is unconditionally enabled to prevent data corruption.
Supply voltage range is 3V to 3.6V
10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Unlimited write cycles, low power consumption
Read and write access times of 100ns
No additional support circuitry is required for microprocessor interfacing
(EN)
