LTC4446EMS8E#PBF - 

制造商：

LINEAR TECHNOLOGY LINEAR TECHNOLOGY

制造商产品编号：

LTC4446EMS8E#PBF

仓库库存编号：

1715080

技术数据表：

(EN)

The LTC4446EMS8E#PBF is a high voltage high side/low side MOSFET Driver that drives two N-channel MOSFETs in a DC/DC converter with supply voltages up to 100V. The powerful driver capability reduces switching losses in MOSFETs with high gate capacitance. The LTC4446's pull-up for the top gate driver has a peak output current of 2.5A and its pull-down has an output impedance of 1.2R. The pull-up for the bottom gate driver has a peak output current of 3A and the pull-down has an output impedance of 0.55R. The LTC4446 is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at up to 114V above ground. The LTC4446 contains under-voltage lockout circuits that disable the external MOSFETs when activated. It does not have adaptive shoot-through protection.

• Bootstrap supply voltage up to 114V
• 2.5A Peak top gate pull-up current
• 3A Peak bottom gate pull-up current
• 1.2R Top gate driver pull-down
• 0.55R Bottom gate driver pull-down
• 5ns Top gate fall time driving 1nF load
• 8ns Top gate rise time driving 1nF load
• 3ns Bottom gate fall time driving 1nF load
• 6ns Bottom gate rise time driving 1nF load
• Drives both high and low side N-channel MOSFETs

• Under-voltage lockout