The LTC1155CS8#PBF is a dual high-side Gate Driver allows using N-channel FETs for high-side switching applications. An internal charge pump boosts the gate above the positive rail, fully enhancing an N-channel MOSFET with no external components. Micro-power operation with 8μA standby current and 85μA operating current allows use in virtually all systems with maximum efficiency. Included on-chip is overcurrent sensing to provide automatic shutdown in case of short circuits. A time delay can be added in series with the current sense to prevent false triggering on high in-rush loads such as capacitors and incandescent lamps. The LTC1155 operates off of a 4.5 to 18V supply input and safely drives the gates of virtually all FETs. The LTC1155 is well suited for low voltage (battery-powered) applications, particularly where micro-power sleep operation is required.
- Short-circuit protection
- Controlled switching ON and OFF times
- No external charge pump components
- Replaces P-channel high-side MOSFETs
- Compatible with standard logic families
- Fully enhances N-channel power MOSFETs
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