The IXFH58N20 is a 200V N-channel Enhancement Mode Power MOSFET with fast intrinsic diode (HiPerFET?) and low RDS (on) HDMOS? process. The IXYS most popular power MOSFET (HiPerFET?) is for both hard switching and resonant mode applications. This MOSFET offers low gate charge and excellent ruggedness with a fast intrinsic diode.