The IXA60IF1200NA is a 1200V XPT IGBT with SONIC? diode and Extreme-light Punch-Through (XPT?) thin wafer technology. Rugged XPT design results in short circuit rated for 10μsec, very low gate charge and low EMI. The thin wafer technology combined with the XPT design results in a competitive low VCE (sat). SONIC? diode offers fast and soft reverse recovery as well low operating forward voltage.
Easy to parallel due to the positive temperature coefficient of the on-state voltage
Reduced thermal resistance
Low energy losses
Fast switching
Low tail current
High power density
Square Reverse Bias Safe Operating Areas (RBSOA) up to breakdown voltages
(EN)
