This advanced 2A, 250V Integrated Power Module offers a combination of IR's low Drain to Source ON Resistance Trench MOSFET technology and the industry benchmark 3-phase high voltage, rugged driver in a small PQFN package. At only 12x12mm and featuring integrated bootstrap functionality, the compact footprint of this surface mount package makes it suitable for applications that are space-constrained. Integrated over-current protection, fault reporting and under-voltage lockout functions deliver a high level of protection and fail-safe operation.
- Integrated gate drivers and bootstrap functionality
- Open-source for leg-shunt current sensing
- Protection shutdown pin
- Under-voltage lockout for all channels
- Matched propagation delay for all channels
- Optimized dV/dt for loss and EMI trade offs
- Cross-conduction prevention logic
- Functions without a heat sink.
电机驱动与控制
