The IRLL110PBF is a 100V single N-channel HEXFET? Power MOSFET, third generation HEXFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The power MOSFET is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place, it has added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application.
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