The IRG4PH40KPBF is a 1200V short-circuit rated Discrete (Insulated Gate Bipolar Transistor) IGBT provides tighter parameter distribution and higher efficiency than previous generations. It combines low induction losses with high switching speed. As a freewheeling diode, HEXFRED? ultrafast, ultrasoft recovery diodes are recommended for minimum EMI/noise and switching losses in the diode and IGBT.
High short circuit rating optimized for motor control (tsc=10μs, VCC=720V, TJ=125°C, VGE=15V)
Latest generation 4 IGBT's offer highest power density motor controls possible
Planar IGBT technology
Ultrafast 8 to 30kHz switching speed
±20V Gate to emitter voltage
10μs Short-circuit withstand time
0.77°C/W IGBT thermal resistance, junction to case