The IRFP4668PBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET featured with improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Enhanced body diode dV/dt and dI/dt capability
Fully characterized capacitance and avalanche SOA
Drain to source voltage (Vds) of 200V
Gate to source voltage of ±30V
On resistance Rds(on) of 8mohm at Vgs 10V
Power dissipation Pd of 520W at 25°C
Operating junction temperature range from -55°C to 175°C
(EN)
