The IRFP260NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage (Vds) of 200V
Gate to source voltage of ±20V
On resistance Rds(on) of 40mohm at Vgs 10V
Power dissipation Pd of 300W at 25°C
Continuous drain current Id of 50A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C