The IRF640NPBF from International Rectifier is 200V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is 200V
Gate to source voltage is ±20V
On resistance Rds(on) of 150mohm
Power dissipation Pd of 150W at 25°C
Continuous drain current Id of 18A at Vgs 10V and 25°C
Operating junction temperature range from -55°C to 175°C