The IRF3710SPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in D2-PAK package. This MOSFET features extremely low on resistance per silicon area, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
Drain to source voltage Vds is 100V
Gate to source voltage is ±20V
On resistance Rds(on) of 23mohm at Vgs of 10V
Power dissipation Pd of 200W at 25°C
Continuous drain current Id of 57A at Vgs 10V and 25°C
(EN)
