The IPW65R041CFD is a 650V N-channel CoolMOS™ Power MOSFET with integrated fast body diode and improved energy efficiency. The softer commutation behaviour and therefore better EMI behaviour gives this MOSFET a clear advantage. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Limited voltage overshoot during hard commutation
- Easy to design in
- Low switching losses due to low Qrr at repetitive commutation on body diode
- Self limiting di/dt and dv/dt
- Low Qoss
- Reduced turn on and turn off delay times
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