The IPT007N06N is a N-channel Power MOSFET optimized for high current applications. This new package is a perfect solution for high power applications where highest efficiency, outstanding EMI behaviour as well as best thermal behaviour and space reduction are required.
Industry's lowest R?DS(on)
Highest current capability up to 300A
Very low package parasitic and inductances
Less paralleling and cooling required
Highest system reliability
Enabling very compact design
100% Avalanche tested
Superior thermal resistance
Qualified according to JEDEC for target applications
