The IPP50R190CE is a CoolMOS™ CE N-channel Power MOSFET optimized platform enabling to target cost sensitive applications by still meeting highest efficiency standards. The new series provides all benefits of a fast switching super-junction MOSFET while not sacrificing ease of use and offering the best performance ratio available on the market. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. CoolMOS™ CE series combines the experience of the leading SJ MOSFET supplier with high class innovation while representing a cost appealing alternative compared to standard MOSFETs in target applications. The resulting devices provide all benefits of a fast switching SJMOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
- High body diode ruggedness
- Reduced reverse recovery charge (Qrr)
- Reduced gate charge (Qg)
- Easy control of switching behaviour
- Better light load efficiency compared to previous CoolMOS™ generations
- Outstanding quality and reliability of CoolMOS™ technology
- Extremely low losses due to very low FOM RDS (ON), Qg and Eoss
- Very high commutation ruggedness
- Easy to use/drive
- Halogen-free, Green device
- Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22)
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