The IPD65R225C7 is a 650V CoolMOS™ C7 N-channel Power MOSFET features lower gate charge. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C7 combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super-junction MOSFET offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.
Increased dV/dt ruggedness
Better efficiency due to best in class FOM RDS (ON) x Eoss and RDS (ON) x Qg
Best in class RDS (ON)
Easy to use/drive
Halogen-free
Enabling higher system efficiency
Enabling higher frequency
Increased power density solutions
Size savings due to reduced cooling requirements
Higher system reliability due to lower operating temperatures
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