The IPD60R600P6 is a 600V CoolMOS™ P6 N-channel Power MOSFET with reduced gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ P6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
Very high commutation ruggedness
Easy to use
Increased dV/dt ruggedness
Halogen-free
Qualified according to JEDEC for target applications
Higher Vth
Optimized integrated Rg
Improved efficiency especially in light load condition
Better efficiency in soft switching applications due to earlier turn-OFF
Suitable for hard and soft-switching topologies
Optimized balance of efficiency and ease of use and good controllability of switching behaviour
(EN)
