The IPD50R1K4CE is a CoolMOS™ N-channel CE Power MOSFET optimized to meet highest efficiency standards. It provides all benefits of a fast switching Super-junction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (Eoss)
High body diode ruggedness
Reduced reverse recovery charge (Qrr)
Reduced gate charge (Qg)
Easy control of switching behaviour
Cost attractive alternative compared to standard MOSFETs
Outstanding quality and reliability of CoolMOS™ technology
Extremely low losses due to very low FOM RDS (ON) x Qg and Eoss
