The IPB067N08N3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
- Optimized technology for DC-to-DC converters
- Excellent gate charge x RDS (ON)?product (FOM)
- Superior thermal resistance
- Dual sided cooling
- Low parasitic inductance
- Normal level
- 100% avalanche tested
- Ideal for high frequency switching and synchronous rectification
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
电源管理, 消费电子产品, 通信与网络, 电机驱动与控制, 发光二极管照明, 车用, 替代能源
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