The IPB049NE7N3 G is a N-channel Power MOSFET with OptiMOS™ technology specializes in synchronous rectification applications. Based on the leading 80V technology these 75V products feature simultaneously lowest ON-state resistances and superior switching performance.
Best switching performance
World's lowest RDS (ON)
Very low Qg?and Qgd
Excellent gate charge x RDS (ON)?product (FOM)
MSL1 rated
Increased efficiency
Highest power density
Less paralleling required
Smallest board-space consumption
Easy-to-design products
Ideal for high frequency switching and DC-to-DC converters
Normal level
100% avalanche tested
Qualified according to JEDEC for target applications
