The IPB034N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Optimized technology for DC-to-DC converters
- Qualified according to JEDEC for target applications
- Logic level
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Avalanche rated
- Halogen-free, Green device
电源管理, 电机驱动与控制, 发光二极管照明, 计算机和计算机周边, 便携式器材, 消费电子产品
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