The IKW40N120T2 is a Low Loss IGBT in 2nd generation TrenchStop? technology with soft, fast recovery anti-parallel emitter controlled diode. The TrenchStop? IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop?-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Lowest Vce (sat)?drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
Very soft, fast recovery anti-parallel emitter controlled HE diode
High ruggedness, temperature stable behaviour
Low EMI emissions
Low gate charge
Very tight parameter distribution
Highest efficiency - Low conduction and switching losses
(EN)
