The IGW50N60T is a Low Loss IGBT in TrenchStop? and field-stop technology. The TrenchStop? IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop?-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat)?drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 5μs Short-circuit withstand time
- Green product
- Halogen-free
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