The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Lowest Vce (sat) drop for lower conduction losses
Low switching losses
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
Very soft, fast recovery anti-parallel emitter controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
Comprehensive portfolio in 600V and 1200V for flexibility of design
(EN)
