The IDH10S120 is a thinQ!™ 2nd generation 1200V SiC Schottky Diode with revolutionary semiconductor material silicon carbide. It is the highest voltage family of Infineon SiC Schottky discrete diodes and is now being extended with the TO-247 package. The very good thermal characteristics of the TO-247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in motor drives, solar applications, UPS, SMPS (CCM, PFC), server, telecom and AC-DC applications.
- Temperature independent switching behaviour
- Pb-free lead plating
- Qualified according to JEDEC for target applications
- Breakdown voltage tested at 20mA
- Optimized for high temperature operation
- Lowest Figure of Merit QC/IF
- System efficiency improvement compared to Si diodes
- Reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
- High operating temperature (Tj max 175°C)
消费电子产品, 电机驱动与控制, 通信与网络, 计算机和计算机周边
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