The IDH10G65C5 is a thinQ!™ 5th generation 650V SiC Schottky Diode represents Infineon leading edge technology. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families, ensures meeting the most stringent application requirements in this voltage range. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in switch mode power supply, power factor correction, solar inverter, uninterruptible power supply, server, telecom, LED/LCD TV, motor drives, PC power and HID lightning.
- Revolutionary semiconductor material-silicon carbide
- Temperature independent switching behaviour
- Pb-free lead plating
- Qualified according to JEDEC for target applications
- Breakdown voltage tested at 22mA
- Optimized for high temperature operation
- Lowest Figure of Merit QC/IF
- System efficiency improvement compared to Si diodes
- System cost/size savings due to reduced cooling requirements
- Enabling higher frequency/increased power density
- Higher system reliability due to lower operating temperature
- Reduced EMI
- High operating temperature (Tj max 175°C)
- Improved surge capability
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- Very high quality and high volume manufacturing capability
消费电子产品, 电机驱动与控制, 照明, 通信与网络, 计算机和计算机周边
