The HOA089X series Transmissive Sensor consists of an infrared emitting diode facing an NPN silicon phototransistor encased in a black thermoplastic housing. Phototransistor switching takes place whenever an opaque object passes through the slot between emitter and detector. It employ a built-in strain relief for maximum wire attachment strength and an opaque polysulfone housing with aperture openings for use in applications in which maximum rejection of ambient light is important and in situations where maximum position resolution is desired. It also employs plastic molded components.
Phototransistor output
Four mounting configurations
Accurate position sensing
0.125" (3.18mm) Slot width
Choice of detector aperture
24" (610mm) Minimum 26 AWG UL 1429 wire leads
Choice of opaque or IR transmissive housing material
(EN)
