MB85RS128BPNF-G-JNE1 - 

制造商：

FUJITSU FUJITSU

制造商产品编号：

MB85RS128BPNF-G-JNE1

仓库库存编号：

2429029

技术数据表：

(EN)

The MB85RS128BPNF-G-JNE1 is a 128-Kbit SPI Ferroelectric Random Access Memory (FRAM) chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RS128B is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128B can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E2PROM. MB85RS128B does not take long time to write data like Flash memories or E2PROM and MB85RS128B takes no wait time.

• Data retention - 10 years
• Operating power supply voltage - 2.7 to 3.6V
• Low power consumption