The MB85RS128APNF-G-JNE1 is a 128kB SPI Ferroelectric Random Access Memory (FRAM) chip in a configuration of 16384 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85RS128A is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85RS128A can be used for 101? read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E2PROM. MB85RS128A does not take long time to write data unlike Flash memories nor E2PROM and MB85RS128A takes no wait time.
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