MB85RC16VPNF-G-JNE1 - 

制造商：

FUJITSU FUJITSU

制造商产品编号：

MB85RC16VPNF-G-JNE1

仓库库存编号：

2070258

技术数据表：

(EN)

The MB85RC16VPNF-G-JNE1 is a 16kB I2C Ferroelectric Random Access Memory (FRAM) chip in a configuration of 2048 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16V is able to retain data without using a data backup battery. The memory cells used in the MB85RC16V have at least 101? Read/Write operation endurance per bit, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products. The MB85RC16V can provide writing in one byte units because the long writing time is not required unlike flash memory and E2PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.

• Operating frequency - 400kHz maximum
• 2-wire serial interface
• Operating power supply voltage - 3 to 5.5V
• Low power consumption
• Data retention - 10 years