MB85R256FPNF-G-JNE2 - 

制造商：

FUJITSU FUJITSU

制造商产品编号：

MB85R256FPNF-G-JNE2

仓库库存编号：

2429031

技术数据表：

(EN)

The MB85R256FPNF-G-JNE2 is a 256kB Ferroelectric Random Access Memory (FRAM) chip in a configuration of 32768 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. The MB85R256F is able to retain data without using a back-up battery, as is needed for SRAM. The memory cells used in the MB85R256F can be used for 1012 read/write operations, which is a significant improvement over the number of read and write operations supported by flash memory and E2PROM. The MB85R256F uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

• Data retention - 10 years
• Low power consumption
• Operating power supply voltage - 2.7 to 3.6V